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采用电子束蒸镀法在H2O+ O2气氛下制备了MgO介质保护膜,通过扫描电镜、X射线衍射(XRD)等方法分析了MgO薄膜的表面、截面形貌与晶体结构,研究了不同H2O流量下得到的MgO薄膜对等离子屏放电特性的影响。结果表明:MgO薄膜呈柱状结构,随H2O流量增加MgO晶粒尺寸变大、晶界减少;XRD分析结果显示H2O+ O2气氛下,MgO薄膜除(111)晶面择优取向外,还出现了(220)晶面取向;H2O气氛的通入降低了等离子屏的维持电压、改善了放电裕度,同时缩短了寻址放电延迟时间,有利于等离子屏节能降耗和实现快速寻址。
The protective film of MgO was prepared by electron beam evaporation in the atmosphere of H2O + O2. The surface, cross-section morphology and crystal structure of MgO thin film were analyzed by scanning electron microscopy and X-ray diffraction (XRD) Influence of the resulting MgO film on the discharge characteristics of the plasma screen. The results show that the MgO film has a columnar structure. With the increase of the flow rate of H2O, the grain size of MgO becomes larger and the grain boundary decreases. The XRD results show that besides the preferred orientation of (111) crystal plane, ) Plane orientation; the introduction of H2O atmosphere reduces the sustain voltage of the plasma panel, improves the discharge margin, and shortens the address discharge delay time, which is in favor of energy saving and quick addressing of the plasma panel.