基于SiC衬底AlGaN/GaN异质结材料研制具有高电流增益截止频率(fT)和最大振荡频率(fmax)的AlGaN/GaN异质结场效应晶体管(HFETs).基于MOCVD外延n+GaN欧姆接触工艺实现了器件尺寸的缩小,有效源漏间距(Lsd)缩小至600 nm.此外,采用自对准工艺制备了60 nm T型栅.由于器件尺寸的缩小,在Vgs=2 V下,器件最大饱和电流(Ids)达到2.0 A/mm,该值为AlGaN/GaN HFETs器件直流测试下的最高值,器件峰值跨导达到608 mS/mm.小信号测试表明,器件fT和fmax最高值分别达到152 GHz和219 GHz. AlGaN / GaN Heterojunction Field Effect Transistors (HFETs) with high current gain cut-off frequency (fT) and maximum oscillation frequency (fmax) were fabricated based on SiC substrate AlGaN / GaN heterostructure. As a result, the size of the device is reduced, and the effective source-drain spacing (Lsd) is reduced to 600 nm. In addition, a 60 nm T-gate is fabricated by self-aligning process. Due to the reduced device size, The peak current (Ids) reached 2.0 A / mm, which was the highest value under DC test in AlGaN / GaN HFETs and the device peak transconductance reached 608 mS / mm. The small signal test showed that the maximum values ​​of fT and fmax were 152 GHz and 219 GHz.