论文部分内容阅读
利用等离子体辅助分子束外延(P-MBE)方法,通过优化生长条件,在c平面蓝宝石(Al_2O_3)上生长出氧化锌(ZnO)单晶薄膜。使用反射式高能衍射仪(RHEED)原位监测到样品表面十分平整,X射线摇摆曲线(XRC)测得ZnO薄膜的<002>取向半峰全宽为0.20°,证实为ZnO单晶薄膜。室温下吸收谱(ABS)和光致发光(PL)谱显示了较强的激子吸收和发射,且无深能级(DL)发光。电学性能测量表明,生长的ZnO为n型半导体,室温下载流于浓度为7×10~(16) cm~(-3),与体单晶ZnO中的载流子浓度相当。
Zinc oxide (ZnO) single crystal films were grown on c-plane sapphire (Al 2 O 3) by plasma-assisted molecular beam epitaxy (P-MBE) by optimizing the growth conditions. The surface of the sample was observed by RHEED. The X-ray rocking curve (XRC) showed that the full width at half-maximum of the <002> orientation of the ZnO thin film was 0.20 ° and was confirmed to be a ZnO single crystal thin film. Absorption spectra (ABS) and photoluminescence (PL) spectra at room temperature show strong exciton absorption and emission with no deep level (DL) luminescence. The measurement of electrical properties shows that the grown ZnO is an n-type semiconductor and has a carrier concentration of 7 × 10 ~ (16) cm ~ (-3) at room temperature, which is equivalent to that of the bulk single crystal ZnO.