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利用磁控溅射法将Cu/Sn/Zn S前驱体沉积在钙钠玻璃基片上,再通过硫化该前驱体制备Cu2ZnSnS4薄膜。利用X射线衍射仪、拉曼光谱仪、扫描电子显微镜、能谱仪、霍尔效应测量系统和紫外可见分光光度计研究了Cu2ZnSnS4薄膜的微观结构、表面形貌、化学成分、电学和光学性能。结果表明,CZTS薄膜的微观结构依赖于硫化温度和时间。在480℃硫化3 h的薄膜为沿(112)晶面择优取向生长的纯相CZTS薄膜,该薄膜的禁带宽度是1.51 e V,其电阻率和载流子浓度分别为0.39Ω·cm和4.07×1017cm-3。
The Cu / Sn / ZnS precursor was deposited on the soda-lime glass substrate by magnetron sputtering, and then the Cu2ZnSnS4 thin film was prepared by sulfidizing the precursor. The microstructure, surface morphology, chemical composition, electrical and optical properties of Cu2ZnSnS4 thin films were investigated by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, Hall effect measurement and UV-Vis spectrophotometer. The results show that the microstructure of CZTS film depends on the curing temperature and time. The films cured at 480 ℃ for 3 h are pure phase CZTS films with preferred orientation along the (112) crystal plane. The band gap of this thin film is 1.51 eV and its resistivity and carrier concentration are 0.39Ω · cm and 4.07 × 10 17 cm -3.