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Bardeen早在35年之前就指出,对于金属-共价半导体界面,金属的费米能级限制于某一数值归因于大密度的界面态。通常认为,这些界面态与金属处于平衡状态。但电容测量清楚地表明存在与半导体相平衡的界面态,甚至对于粘性接触也存在这种情况。最近,Freeouf证明这种界面态会影响I-V特性。文中介绍了Au-InP和Au-Si接触的一些例子,用以说明界面态能谱和I-V不理想性的关系。
As early as 35 years ago Bardeen pointed out that for the metal-covalent semiconductor interface, the Fermi level of the metal is limited to a certain value due to the high density of interface states. It is generally assumed that these interface states are in equilibrium with the metal. However, the capacitance measurement clearly shows that there is an interface state that is in balance with the semiconductor, even with viscous contacts. Recently, Freeouf proved that this interface state can affect I-V characteristics. In this paper, some examples of Au-InP and Au-Si contacts are introduced to illustrate the relationship between the interface state spectrum and I-V inhomogeneity.