本文介绍了砷化镓-镓铝砷Npn异质结双极型晶体管的设计原理.分析了该管在高频特性、开关特性、温度特性方面超过Si平面管的潜在优越性.叙述了制管工艺与直流、高频和温度特性等实验结果.给出了一个细线条结构的Npn GaAs晶体管作为进一步考察高频和噪声性能的实例.理论计算表明:该管的最大振荡频率f_(max)可高达88GHz,在12GHz下的噪声系数为1.2dB.讨论了NpnGaAs平面晶体管和倒置晶体管的结构及其优点.最后比较了GaAs双极型管和GaAs MESFET的优缺点. This paper introduces the design principle of gallium arsenide-gallium aluminum-arsenide Npn heterojunction bipolar transistor, analyzes its potential advantages over Si planar tube in terms of high-frequency characteristics, switching characteristics and temperature characteristics. Process and DC, high frequency and temperature characteristics of the experimental results.Npn GaAs transistor with a thin line structure is given as an example to further investigate the high frequency and noise performance.Real calculations show that the maximum oscillation frequency of the tube can be f max Up to 88GHz and a noise figure of 1.2dB at 12GHz.The structures and advantages of NpnGaAs planar transistors and inverted transistors are discussed.The advantages and disadvantages of GaAs bipolar transistors and GaAs MESFETs are compared.