The efficiency of organic light-emitting devices (OLEDs) based on N,N’-bis(1-naphthyl)-N,N’-diphenyl-N,1’- biphenyl-4,4’-diamine (NPB) (the hole transport layer) and tris(8-hydroxyquinoline) aluminum (Alq 3 ) (both emission and electron transport layers) is improved remarkably by inserting a LiF interlayer into the hole transport layer. This thin LiF interlayer can effectively influence electrical performance and significantly improve the current efficiency of the device. A device with an optimum LiF layer thickness at the optimum position in NPB exhibits a maximum current efficiency of 5.96 cd/A at 215.79 mA/cm 2 , which is about 86% higher than that of an ordinary device (without a LiF interlayer, 3.2 cd/A). An explanation can be put forward that LiF in the NPB layer can block holes and balance the recombination of holes and electrons. The results may provide some valuable references for improving OLED current efficiency. The efficiency of organic light-emitting devices (OLEDs) based on N, N’-bis (1-naphthyl) -N, N’-diphenyl- hole transport layer) and tris (8-hydroxyquinoline) aluminum (Alq 3) (both emission and electron transport layers) is remarkably pinned by inserting a LiF interlayer into the hole transport layer. This thin LiF interlayer can effectively influence electrical performance and significantly improve the current efficiency of the device. A device with an optimum LiF layer thickness at the optimum position in NPB exhibits a maximum current efficiency of 5.96 cd / A at 215.79 mA / cm 2, which is about 86% higher than that of an ordinary device (without a LiF interlayer, 3.2 cd / A). An explanation can be put forward that LiF in the NPB layer can block holes and balance the recombination of holes and electrons. The results may provide some valuable references for improving OLED current efficiency.