研究了单层Ｓｉ分别δ－掺杂于Ｉｎ０．２Ｇａ０．８Ａｓ／ＧａＡｓ单量子阱系统中的单边势垒与双边势垒的光致发光谱，并与未掺杂样品相比较，发现掺杂样品的发光峰红移，其中单边势垒掺杂样品红移约４ｍｅＶ，双边势垒掺杂样品红移的量更多约１２ｍｅＶ．本文用杂质散射与空穴空间局域化来解释掺杂样品的发光半峰宽较本征样品大很多．用有效质量方法计算３个样品的光致发光能量，并用电子相关交换势解释掺杂样品发光红移的现象． The photoluminescence spectra of single-sided barrier and bilateral barrier of δ-doped single-layered Si in In0.2Ga0.8As / GaAs single quantum well system were investigated. Compared with undoped samples, doping The luminescence peak of the sample was red-shifted, in which the unilateral barrier-doped sample was red-shifted by about 4 meV and the amount of red-shifted by the bilateral barrier-doped sample was about 12 meV. In this paper, the impurity scattering and cavity localization are used to explain the half-width of the emission spectrum of the doped samples is much larger than that of the intrinsic samples. The photoluminescence energies of the three samples were calculated by the effective mass method, and the red shift of the doped samples was explained by the electron exchange potential.