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用磁控射频溅射方法制备了Pb（Zr0．52Ti0.48）O3薄膜。研究了制膜工艺对Pb（Zr0．52Ti0．48）O3薄膜相、结晶性和铁电特性的影响。实验表明，所制备的薄膜表面致密、光滑。此Pb（Zr0.52Ti0.48）O3薄膜以钙钛矿结构为主，并具有较高的剩余极化、饱和极化和较小的矫顽场。从实验结果分析得，通过控制工艺条件所制得的单相钙钛矿型的Pb（Zr0.52Ti0.48）O3薄膜的铁电特性得到很大提高。并制备出用于永久性存贮器的优质Pb（Zr0.52Ti0.48）O3薄膜。
Pb (Zr0.52Ti0.48) O3 thin films were prepared by magnetron RF sputtering. The effects of filming process on the phase, crystallinity and ferroelectric properties of Pb (Zr0.52Ti0.48) O3 thin films were studied. Experiments show that the prepared film surface is dense and smooth. The Pb (Zr0.52Ti0.48) O3 thin film is mainly of perovskite structure with high remanent polarization, saturated polarization and smaller coercive field. The experimental results show that the ferroelectric properties of single-phase perovskite Pb (Zr0.52Ti0.48) O3 thin films obtained by controlling the process conditions are greatly improved. And a high-quality Pb (Zr0.52Ti0.48) O3 thin film for permanent memory was prepared.