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自从８０年代金刚石薄膜的低压化学汽相淀积获得成功以来，人们对用金刚石薄膜制作高温、高速和大功率器件产生了浓厚的兴趣，因为金刚石的禁带宽，载流子迁移率高，同时具有优异的热学、光学和力学性质．本文对金刚石的电子学特征和金刚石器件的研制现伏作了评述，对发展金刚石器件的若干问题特别是金刚石薄膜的ｎ型掺杂、金刚石膜的异质外延和降低缺陷浓度等作了分析和讨论．金刚石薄膜是一种潜在的新型半导体材料，但要实现器件应用尚需作大量的材料研究．
Since the successful low-pressure chemical vapor deposition of diamond films in the 1980s, there has been a great interest in making high-temperature, high-speed and high-power devices using diamond films because diamond has a forbidden bandwidth with high carrier mobility and has Excellent thermal, optical and mechanical properties. In this paper, the electronic characteristics of diamond and the development of diamond devices are reviewed. Some problems in the development of diamond devices, especially the n-type doping of diamond films, the heteroepitaxy of diamond films and the reduction of the concentration of defects, discuss. Diamond film is a potential new type of semiconductor material, but there is still a large amount of material research needed to realize the device application.