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采用1.5%,4.0%和6.0%3种不同的C-545T的掺杂浓度,在常温下制备了一种双量子阱结构的有机电致发光器件(OLEDs),其结构为ITO/2T-NATA(21nm)NPBX(50nm)/[Alq3:C-545T(20nm)/Alq3(3nm)]2/Alq3(17nm)/LiF(0.5nm)/Al,并研究了它们的磁电阻(MR,magne-toresistance)特性。实验结果表明,在室温以及相同的磁场强度和相同电压作用时,掺杂浓度越大,电阻率越小;且随着电压的增加,电阻率逐渐减小;C-545T掺杂浓度为6.0%的器件在V=10V和B=0mT时,器件的电阻率为42.24×103Ω.m;在10V驱动电压的作用和相同磁场强度下,掺杂浓度越小,器件的MR越小,且变化量较大;1.5%掺杂浓度的器件在50mT时获得的MR为-18.36%,且都表现出负磁阻特性。
The structure of ITO / 2T-NATA (double quantum well) organic electroluminescent devices (OLEDs) was prepared at room temperature using the doping concentration of C-545T at 1.5%, 4.0% and 6.0% (21 nm) NPBX (50 nm) / [Alq3: C-545T (20 nm) / Alq3 (3 nm)] 2 / Alq3 (17 nm) / LiF (0.5 nm) toresistance) feature. The experimental results show that at room temperature and the same magnetic field strength and the same voltage, the resistivity decreases with the increase of the doping concentration, and decreases with the increase of the voltage. The doping concentration of C-545T is 6.0% Of the device at V = 10V and B = 0mT, the device resistivity of 42.24 × 103Ω.m; 10V drive voltage and the same magnetic field strength, the smaller the doping concentration, the smaller the device MR, and the amount of change Larger; 1.5% doping concentration of the device obtained at 50mT MR -18.36%, and both showed negative magnetoresistance properties.