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分析了单片数字移相器的移相原理,详细介绍了每一个基本移相位的设计方法及结构,基于GaAs赝配高电子迁移率晶体管(PHEMT)工艺技术设计并制作了一款超宽带6 bit数字移相器。采用ADS Momentum微波设计环境进行了电路仿真,在中国电子科技集团公司第十三研究所的GaAs工艺线上进行了工艺流片并进行了在片测试。测试结果表明,6 bit数控移相器在工作频率为8~12 GHz时,主要移相态的均方根相位误差(RMS)值小于2.0°,回波损耗小于-11 dB,插入损耗为8.0~9.5 dB,插损波动为-0.5~0.8 dB,控制电压为-5 V/0 V。6 bit数字移相器的电路尺寸为4.1 mm×1.5 mm,并行输入控制信号,其有效工作带宽达到了40%。
The phase shift principle of the monolithic digital phase shifter is analyzed. The design method and structure of each basic phase shift are introduced in detail. Based on the GaAs pseudomorphic high electron mobility transistor (PHEMT) technology, an ultra wide band 6 bit digital phase shifter. The ADS Momentum microwave design environment was used to simulate the circuit. The process flow was performed on the GaAs process line of the thirteenth Institute of China Electronics Technology Corporation and the on-chip test was carried out. The test results show that the RMS phase shift of the 6-phase NC phase shifter is less than 2.0 ° and the return loss is less than -11 dB and the insertion loss is 8.0 at the operating frequency of 8-12 GHz. ~ 9.5 dB, insertion loss fluctuation is -0.5 ~ 0.8 dB, control voltage is -5 V / 0 V. The circuit size of the 6-bit digital phase shifter is 4.1 mm × 1.5 mm, and the control signals are input in parallel, resulting in an effective working bandwidth of 40%.