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应用溅射技术,在具有[111]取向的CdTe衬底上生长出了Cd组分(x值)在0.14—0.4范围内、大面积(大到15平方厘米)的Cd_xHg_(1-x)Te外延层(厚度<15微米)。在加热到200℃的衬底上,该外延层以每小时0.6微米的沉积速率生长。采用不同的分析技术,如反射高能电子衍射法(RHEED)、反射x射线形貌法和透射电子显微术(TEM),研究了外延层的晶体学特性。RHEED图形反映出外延层具有高品质晶体的性质。x射线形貌法的研究结果表明,外延层的亚结构与衬底的亚结构十分类似。上述结果与TEM的观察结果是一致的。
A large area (up to 15 cm 2) of Cd_xHg_ (1-x) Te was grown on a CdTe substrate with a [111] orientation using a sputtering technique with a Cd content in the range of 0.14-0.4 Epitaxial layer (thickness <15 microns). On a substrate heated to 200 ° C, the epitaxial layer grows at a deposition rate of 0.6 microns per hour. The crystallographic properties of the epitaxial layer were investigated using different analytical techniques such as RHEED, X-ray reflectometry and transmission electron microscopy (TEM). The RHEED pattern reflects the high-quality crystalline nature of the epitaxial layer. The results of X-ray topography show that the sub-structure of the epitaxial layer is very similar to the sub-structure of the substrate. The above results are consistent with the TEM observations.