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用DLTS与缺陷退火的方法研究了室温下1MeV电子辐照后n-GaP中的深能级,发现辐照后n-GaP中出现六个电子能级E_1-E_6和三个空穴能级H_1-H_2。等时和等温退火实验表明,除E_6、H_2、H_3能级外,其余能级在实验到达的退火温度583k以内,都先后分组消失。从各能级的退火特性,分析其退火动力学,推断其所属的退火机制,并对各能级所代表的缺陷形态作出合理的辨认。
Using DLTS and defect annealing method, the deep level in n-GaP after 1 MeV electron irradiation at room temperature was studied. It was found that six electron levels E_1-E_6 and three hole levels H_1 -H_2. Isochronous and isothermal annealing experiments show that, in addition to E_6, H_2, H_3 level, the remaining energy levels in the experiment reached the annealing temperature within 583k, have successively disappeared group. From the annealing characteristics of each level, the annealing kinetics is analyzed, the annealing mechanism is deduced, and the defect shape represented by each level is reasonably identified.