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采用碳化硅外延和器件工艺制造了碳化硅结势垒肖特基(JBS)二极管,耐压达到1200V,封装的器件电流室温达到5A(正向压降2.1V)。通过在不同工作温度下对比测试显示了直流特性随工作温度的变化情况,并验证至少在250°C下依旧能正常工作。研制的1 200 V碳化硅JBS二极管和IXYS公司的600V硅快恢复二极管(Fastrecovery diode)进行了对比:室温动态开关测试中,碳化硅二极管的反向恢复能耗比硅二极管节省92%。这是国内首次报道的250°C高温下正常工作的碳化硅JBS二极管。
Silicon carbide junction barrier Schottky (JBS) diodes are fabricated using silicon carbide epitaxy and device technology. Withstanding voltage of 1200V, the packaged device current reaches 5A (2.1V forward voltage drop). The comparison of the DC characteristics with the operating temperature shows that the DC characteristic can still work normally at least at 250 ° C by comparing the different operating temperatures. The developed 1 200 V SiC JBS diode is compared with IXYS 600 V Fastrecovery diode. In the RTD test, the reverse recovery energy consumption of silicon carbide diode is 92% less than the silicon diode. This is the first report of a normal operating silicon carbide JBS diode at 250 ° C in China.