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亚16 nm以下的互连技术中需要采用电阻率低、阻挡性能好、与Cu粘附性好并同时具有较好抛光性能的新型扩散阻挡层。利用自制2英寸图形片,对Mo和CoMo新型扩散阻挡层Cu互连结构图形片的抛光性能进行了初步研究。使用扫描电子显微镜、原子力显微镜及白光干涉仪观察表面与截面微观形貌;用电阻测试研究抛光后各不同区域铜线深度变化。结果显示,经过相同的酸性抛光液(pH值为4)抛光后,相比于Mo样品,CoMo样品具有较小的Cu碟形缺陷和较小的表面粗糙度。抛光后CoMo样品具有良好的抛光表面均匀性。
Sub-16 nm interconnect technology requires the use of low resistivity, barrier properties, good adhesion with Cu, and at the same time better polishing performance of the new diffusion barrier. Polishing properties of the Cu interconnect structure films of Mo and CoMo novel diffusion barriers were studied by using self-made 2-inch wafer. Scanning electron microscopy, atomic force microscopy and white light interferometer were used to observe the surface and cross-section micrographs. The resistance changes were measured by resistance test. The results showed that the CoMo samples had smaller Cu disc defects and smaller surface roughness than the Mo samples after being polished with the same acidic slurry (pH 4). CoMo samples after polishing have good polishing surface uniformity.