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本文报导了3毫米频段硅P~+NN~+崩越二极管研制中采取的工艺措施和实验结果.器件的最佳性能为:103GHz输出115mW,η=3.6%;126GHz下输出30mW,η=1.5%
In this paper, the process and experimental results of silicon P ~ + NN ~ + collapse diode in 3mm band are reported.The best performance of the device is: output of 115mW at 103GHz and η = 3.6%; output of 30mW at 126GHz and η = 1.5 %