利用超高真空电子束蒸发，在Ｓｉ衬底上淀积Ｃｏ－Ｓｉ多层膜．经热处理后，发现在６００—７００℃内ＣｏＳｉ２形成的过程中，成核控制、界面反应及扩散等几种因素都能起较大的作用，并因此而造成了ＣｏＳｉ２薄膜生长动力学的极其复杂性．本文还对样品进行了电阻率和扩展电阻测量．并讨论了利用常规手段来消除薄膜横、纵向非均匀性的几种途径． Co-Si multilayer films were deposited on Si substrates by ultra-high vacuum electron beam evaporation. After heat treatment, it was found that CoSi2 formed in the process of 600-700 ℃, nucleation control, interface reaction and diffusion and other factors can play a greater role, and thus resulted in CoSi2 film growth kinetics is extremely complex Sex. The sample was also resistivity and extended resistance measurements. Several ways to eliminate the horizontal and vertical non-uniformity of the film by using conventional methods are also discussed.