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本文从考虑了GaAs外延层与衬底的界面陷阱效应的等效电路出发,对影响器件噪声的主要因素进行了理论分析,给出了器件设计范围内的噪声系数与等效电路参数、器件结构参数、材料参数和工作频率的关系曲线。提出了氧离子注入的新型平面器件结构,用普通接触式补偿光刻法制作了亚微米栅条,所得器件比普通台式器件具有更低的微波噪声。在12GHz下,噪声系数为3.5dB,相应的增益为5dB。给出了2～12GHz全套S参数。器件平均工作寿命达2×10~7小时。进行了2～12GHz范围内微波低噪声放大器、混频器和振荡器等应用试验,取得了初步的良好结果。
Based on the equivalent circuit of interfacial trapping effect of GaAs epilayer and substrate, the paper analyzes the main factors that affect the noise of the device, and gives the noise factors and equivalent circuit parameters in the design range of the device. The device structure Parameters, material parameters and operating frequency curve. A novel planar device structure for oxygen ion implantation is proposed. Submicron grids are fabricated by conventional contact compensation photolithography. The resulting device has lower microwave noise than conventional benchtop devices. At 12GHz, the noise figure is 3.5dB and the corresponding gain is 5dB. Given a full range of 2 ~ 12GHz S parameters. Device average working life of 2 × 10 ~ 7 hours. Experiments on microwave low noise amplifiers, mixers and oscillators in the frequency range of 2 ~ 12GHz were carried out, and preliminary good results were obtained.