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研究了硼原子对 Si( 1 0 0 )衬底上 Ge量子点自组织生长的影响 .硼原子的数量由 0单原子层变到 0 .3单原子层 .原子力显微镜的观察表明 ,硼原子不仅对量子点的大小 ,而且对其尺寸均匀性及密度都有很大影响 .当硼原子的数量为 0 .2单原子层时 ,获得了底部直径为 60± 5nm,面密度为 6× 1 0 9cm- 2 ,且均匀性很好的 Ge量子点 .另外 ,还简单讨论了硼原子对 Ge量子点自组织生长影响的机制 .
The effect of boron atoms on the self-organized growth of Ge quantum dots on Si (100) substrates was investigated.The number of boron atoms changed from 0 to 0.3 in the single atomic layer.The observation of atomic force microscopy showed that boron atoms not only On the size of the quantum dot, and its size uniformity and density have a great impact.When the number of boron atoms is 0.2 single-atom layer, obtained at the bottom diameter of 60 ± 5nm, the areal density of 6 × 10 9cm-2, and well-distributed Ge quantum dots.In addition, the mechanism of the effect of boron atoms on the self-organized growth of Ge quantum dots is also briefly discussed.