离子注入于单晶Si已成为制造超大规模集成电路很有成效的技术,离子注入非晶Si也已有所研究,但离子注入于另一类非晶—硫系却很少有报道。为了解这方面的情况,开辟新的应用条件。我们将A~+s离子注入非晶Se研究其光致放电特性及表面形貌与光学性质。光致放电特性已经报道,所以本文着重介绍用光学显微镜及椭偏仪分别研究A~+s离子注入非晶Se的表面形貌及光学性质。 Ion implantation into single-crystal Si has become a very effective technique for manufacturing very large-scale integrated circuits. Ion-implanted amorphous Si has also been studied, but ion implantation into the other amorphous-sulfur systems is seldom reported. In order to understand this situation, open up new application conditions. We will A ~ + s ion implantation of amorphous Se to study its photodischarge properties and surface morphology and optical properties. The photodischarge characteristics have been reported. Therefore, this paper focuses on the surface morphology and optical properties of A ~ + s ion-implanted amorphous Se by optical microscopy and ellipsometry.