随着 MOS 大规模、超大超模集成电路的发展,必然地要提出图形加工微细化的任务。在光致抗蚀剂中产生细条纹的图形多年来就是积极研究和发展的领域。目前在光学、电子束和 X 一射线光刻技术方面已取得了巨大进展。当着光刻技术要求图形的线宽变得越来越小的时候,要把抗蚀剂上的图形精确地转移到下面的电路材料上,就变得越 With the development of MOS large-scale and super-supermode integrated circuits, it is inevitable to propose the task of miniaturization of graphics processing. Patterns that produce pinprints in photoresists have been an active area of ​​research and development for many years. There has been great progress in optics, electron beam and X-ray lithography. When lithography requires that the line width of the pattern become smaller and smaller, the pattern on the resist must be precisely transferred to the underlying circuit material to become more