论文部分内容阅读
为了抑制埋层注氮导致的埋层内正电荷密度的上升,本文采用氮氟复合注入方式,向先行注氮的埋层进行了注氮之后的氟离子注入,并经适当的退火,对埋层进行改性.利用高频电容-电压(C-V)表征技术,对复合注入后的埋层进行了正电荷密度的表征.结果表明,在大多数情况下,氮氟复合注入能够有效地降低注氮埋层内的正电荷密度,且其降低的程度与注氮后的退火时间密切相关.分析认为,注氟导致注氮埋层内的正电荷密度降低的原因是在埋层中引入了与氟相关的电子陷阱.另外,实验还观察到,在个别情况下,氮氟复合注入引起了埋层内正电荷密度的进一步上升.结合测量结果,讨论分析了该现象产生的原因.
In order to suppress the increase of the positive charge density in the buried layer due to the nitrogen injection in the buried layer, a fluorine-ion implantation after the nitrogen injection was carried out on the nitrogen-implanted buried layer by a nitrogen-fluorine composite injection method. After appropriate annealing, Layer was modified.The positive charge density of the implanted buried layer was characterized by high-frequency capacitance-voltage (CV) characterization technique.The results show that in most cases, nitrogen-fluorine composite implantation can effectively reduce the injection The positive charge density in the nitrogen buried layer is closely related to the annealing time after the nitrogen injection.The analysis shows that the reason for the decrease of the positive charge density in the nitrogen injection buried layer due to the fluorine injection is that in the buried layer, Fluorine-related electron traps.In addition, the experiment also observed that in some cases, the nitrogen fluorine compound injection caused the positive charge density in the buried layer to rise further.Combined with the measurement results, the reason of the phenomenon was discussed and analyzed.