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本文讨论了以射频磁控溅射为主要工艺制备的TiO2/SiOxNy/SiO2结构高k栅介质。文中重点讨论了不同成分界面SiOxNy薄膜作用下,栅介质整体电容-电压特性的异同,并论述了SiO2界面层在保证栅介质良好电学性能方面的作用。
This paper discusses the high-k gate dielectric of TiO2 / SiOxNy / SiO2 fabricated by RF magnetron sputtering as the main process. In this paper, we mainly discuss the similarities and differences of the overall capacitance-voltage characteristics of the gate dielectric under different compositions of interface SiOxNy films, and discuss the function of the SiO2 interface layer in ensuring the good electrical properties of the gate dielectric.