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采用微波CVD系统研究了Ar-CO_2-CH_4气氛中不同工艺条件对超纳米金刚石薄膜形貌的影响。结果表明:以Ar-CO_2-CH_4为反应气源,可制备出晶粒尺寸为20 nm左右、表面粗糙度在16 nm以下,厚度达5μm以上,结构致密的超纳米金刚石薄膜;在Ar-CH_4组分中添加CO_2可明显提高金刚石膜的沉积速率,但采用该气源组分能够得到致密金刚石膜的气源组成范围很窄。其原因和控制方式有待深入研究。
Microwave CVD system was used to study the influence of different process conditions in Ar-CO_2-CH_4 atmosphere on the morphology of the nanostructured diamond films. The results show that the ultra-nanocrystalline diamond films with the grain size of about 20 nm, the surface roughness of less than 16 nm and the thickness of more than 5 μm can be prepared by Ar-CO_2-CH_4 as the reactive gas source. The addition of CO 2 to the composition can obviously improve the deposition rate of the diamond film, but the gas source composition of the dense diamond film can be obtained using this gas source composition to a very narrow range. The reasons and control methods need further study.