Few-layer graphene (FLG) is successfully grown on sapphire substrates by directly depositing carbon atoms at the substrate temperature of 1300℃ in a molecular beam epitaxy chamber.The reflection high energy diffraction,Raman spectroscopy and near-edge x-ray absorption fine structure are used to characterize the sample,which confirm the formation of graphene layers.The mean domain size of FLG is around 29.2 nm and the layer number is about 2-3.The results demonstrate that the grown FLG displays a turbostratic stacking structure similar to that of the FLG produced by annealing C-terminated a-SiC surface.Graphene,a monolayer of sp2-bonded carbon atoms,is a quasi two-dimensional (2D) material.It has attracted great interest because of its distinctive band structure and physical properties.[1] Graphene can now be obtained by several different approaches including micromechanical[1] and chemical[2] exfoliation of graphite,epitaxial growth on hexagonal SiC substrates by Si sublimation in vacuum,[3] and CVD growth on metal substrates.[4] However,these preparation methods need special substrates,otherwise,in order to design microelectronic devices,the prepared graphene should be transferred to other appropriate substrates.Thus the growth of graphene on the suitable substrates is motivated.