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在1.3μm InGaAsP/lnP DH激光器发射谱中,我们观测到 0.95μm的短波发射带.实验分析表明这一发射带不是由结偏位引起,也不是有源区中导带到自旋轨道分裂价带的复合发光.当温度从200K到300K变化时,这发光带的峰值随温度的变化与经过自吸收的InP侧向光荧光谱一致.此发光帝的强度与有源区内载流子浓度三次方成正比.这说明此发光带是有源区内俄歇复合产生的高能载流子越过异质结势垒到InP 限制层中的复合发光.
In the 1.3μm InGaAsP / InP DH laser emission spectra, we observed a shortwave emission band of 0.95μm. Experimental results show that this emission band is not caused by the junction misalignment nor is the splitting of the conduction band to the spin orbit in the active region With the composite luminescence.When the temperature changes from 200K to 300K, the peak value of this luminescence band changes with the self-absorbed InP side of the fluorescence spectrum consistent with the intensity of this luminous Emperor and the carrier concentration in the active region This shows that the luminescent band is the recombination of high energy carriers generated by Auger recombination in the active region across the heterojunction barrier to the InP confinement layer.