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GaAs absorber was grown at low temperature (550℃) by metal organic chemical vapour deposition (MOCVD)and was used as an output coupler with which we realized Q-switching modelocked Yb3+-doped fibre laser. The shortest period of the envelope of the Q-switched modelocking is about 3μs. The modelocking threshold is 4.27 W and the highest average output pulse power is 290mW. The modelocking frequency is 12MHz.