采用 Ga As75 mm 0 .7μm离子注入场效应晶体管 (MESFET)标准工艺技术研制出手机用 Ga As双刀双掷(DPDT)单片射频开关 (以下简称单片开关 ) .成品率分析表明 ,影响单片开关直流及射频参数成品率的主要因素包括 :材料几何参数、注入退火均匀性、栅光刻成品率、挖槽控制及圆片沾污等 .优化工艺条件可以使单片开关直流成品率稳定在 90 %左右 ,微波成品率稳定在 80 %左右 ,接近国际上砷化镓标准加工线的水平 GaAs double pole double throw (DPDT) monolithic radio frequency switch (hereinafter referred to as monolithic switch) was developed using Ga As75 mm 0 .7μm ion implantation field effect transistor (MESFET) standard process technology. The yield analysis shows that the effect of single Chip switch DC and RF parameters yield the main factors include: geometric parameters of the material, injection annealing uniformity, gate lithography yield, ditch control and wafer contamination, etc. Optimum process conditions can make the monolithic switch DC yield stable At about 90%, the microwave yield stabilized at around 80%, close to the international level of gallium arsenide standard processing line