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研究了外加高压 (1GPa)下对 45 0℃热处理硅片中氧沉淀行为的影响 .透射电镜观察表明相对于大气压下热处理的样品 ,高压处理的样品会产生密度更高、尺寸更小的氧沉淀 ,表明高压有利于小直径氧沉淀的生成 .电学性能测试表明 ,高压下处理的样品其热施主生成浓度和生成速率远远高于常压下处理的样品 ,这表明热施主与低温热处理过程中生成的高浓度氧沉淀核心有密切的关系
The effect of high pressure (1GPa) on the oxygen precipitation behavior at 45 ℃ in the silicon wafer was investigated.The TEM observations showed that the high pressure treated samples produced higher density and smaller size oxygen precipitates than the heat treated samples at atmospheric pressure , Indicating that the high pressure is conducive to the formation of small diameter oxygen precipitation.Electrical performance tests show that the samples prepared under high pressure have a much higher concentration and rate of thermal donor formation than the samples treated under atmospheric pressure, indicating that the thermal donor and low temperature heat treatment Generated high concentrations of oxygen precipitation core is closely related