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演示了高灵敏度长波 InGaAs/InP 单片PIN 场效应晶体管光电子集成电路(OEIC)接收器。该光电子单片集成电路采用倒相放大器,用离子注入技术和 MOVPE 生长的晶体制成。当波长为1.3μm时,该光电子单片集成电路在622Mb/s、1.2Gb/s 和2Gb/s 的灵敏度分别为—33.6、—26.5和—24.3dBm。使用同样技术,还设计并制出可用—5伏单电源运转的光电子集成电路。其灵敏度在622Mb/s 为—32dBm,动态范围22dB。噪声测量显示,噪声来源于第一个场效应管后面的回路以及反馈电阻中的热噪声。测量还表明,为获得极高灵敏度必须减小结型场效应管的栅噪声。
Demonstrated a high sensitivity long wave InGaAs / InP monolithic PIN field effect transistor optoelectronic integrated circuit (OEIC) receiver. The optoelectronic monolithic integrated circuit using an inverting amplifier, using ion implantation technology and MOVPE grown crystal. When the wavelength is 1.3μm, the optoelectronic monolithic integrated circuits have sensitivity of -33.6, -26.5 and -24.3dBm respectively at 622Mb / s, 1.2Gb / s and 2Gb / s. Using the same technology, optoelectronic integrated circuits that operate with a single -5 V supply are also designed and fabricated. Its sensitivity is -32dBm at 622Mb / s and its dynamic range is 22dB. Noise measurements show that the noise comes from the loop behind the first FET and the thermal noise from the feedback resistor. The measurements also show that the gate noise of the junction FET must be reduced to achieve extremely high sensitivity.