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In_(1-x)Ga_xAs_(1-y)P_y四元合金是近几年来研究较活跃、发展较快和很有希望的Ⅲ-Ⅴ族多元化合物半导体材料。它引起人们注意的主要原因是它的组分参数X、Y值可以独立地改变,而且能在较宽的范围内调节禁带宽度和晶格常数,能与几种衬底材料(如InP、GaAs、GaAsP等)相匹配,相对应的禁带宽度在0.4～2.2eV之间。其中,InGaAsP/InP异质结的优越性尤为突出,因为它们晶格匹配的带隙范围为0.7～1.4eV,相应的发射和响应波长在0.9～1.7μm之间[2、4],目前光纤通讯中石英光纤在1.0～1.7μm波段内有损耗低和零色散区域。因此InGaAsP/
The In_ (1-x) Ga_xAs_ (1-y) P_y quaternary alloys have been actively studied, developed rapidly and promising in recent years for the group Ⅲ-Ⅴ multicomponent semiconductor materials. The main reason it draws attention is that its component parameters X and Y can be independently changed, and the bandgap and lattice constant can be adjusted within a wide range. With several kinds of substrate materials such as InP, GaAs, GaAsP, etc.) match, the corresponding band gap in the 0.4 ~ 2.2eV between. Among them, InGaAsP / InP heterojunction superiority is particularly prominent because of their lattice-matched band gap range of 0.7 ~ 1.4eV, the corresponding emission and response wavelength of 0.9 ~ 1.7μm [2,4], the current fiber Quartz fiber optic communication in the 1.0 ~ 1.7μm band loss and zero dispersion area. Therefore, InGaAsP /