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采用CdSe/ZnS红光量子点(QD),利用旋涂和真空蒸镀工艺制备了结构为ITO/TPD+PVK/QDs/Alq3/LiF/Al的量子点发光器件(QD-LED),并对器件的发光性能做了测试。研究了ITO表面处理、TPD空穴传输层和QD发光层的厚度对QD-LED性能的影响,并通过调整QD发光层和Alq3电子传输层的厚度,制备了可用于照明的白光QD-LED。实验结果表明,ITO的表面处理可有效降低器件的开启电压,开启电压从9 V降到7 V左右;TPD空穴传输层和QD发光层的厚度对器件的电流密度和发光亮度有较大的影响,而Alq3电子传输层和QD发光层的合理配比可以混合出较高色温的白光。通过优化器件各参数,当TPD和PVK质量比为5∶1、QD度为1.0mg/ml和Alq3厚为60nm时,制备的器件在15V电压时发光效率达到了1 500cd/m2,色坐标为(0.362 8,0.379 6),显色指数为88.1。
The quantum dot light-emitting device (QD-LED) with the structure of ITO / TPD + PVK / QDs / Alq3 / LiF / Al was prepared by spin-coating and vacuum evaporation using CdSe / ZnS red quantum dots (QDs) The luminous performance has been tested. The effects of ITO surface treatment, thickness of TPD hole transport layer and QD luminescent layer on the performance of QD-LED were studied. By adjusting the thickness of QD luminescent layer and Alq3 electron transport layer, a white LED QD-LED was prepared. The experimental results show that the surface treatment of ITO can effectively reduce the turn-on voltage of the device, and the turn-on voltage drops from 9 V to about 7 V. The thickness of the TPD hole transport layer and the QD light emitting layer has a greater effect on the device current density and luminance While the reasonable ratio of the Alq3 electron transport layer and the QD light emitting layer can mix the white light with a higher color temperature. By optimizing the parameters of the device, when the mass ratio of TPD to PVK is 5:1, the QD degree is 1.0mg / ml and the Alq3 thickness is 60nm, the luminescent efficiency of the prepared device reaches 1 500 cd / m2 at 15V voltage with color coordinates (0.362 8,0.379 6), color rendering index of 88.1.