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本文研究了n沟SOS晶体管中γ射线辐照损伤无偏置退火的温度关系。研究发现,当辐照产生的氧化层俘获电荷多于界面态电荷时,等温退火会导致界面态电荷增加。界面态电荷是氧化层俘获电荷转变成界面态电荷造成的。阈值电压退火的速率限制阶段便是这一转变阶段。在辐照明显引起界面态电荷时,辐照引起的界面态电荷在高温下退火会立即消除,但也发现了氧化层俘获电荷向界面态电荷转变这一现象。因此,高温下界面态退火的特性就变得复杂起来。辐照之后阈值电压的不稳定性归固于界面态的增减。
This paper studies the temperature dependence of γ-ray irradiation damage in n-channel SOS transistors without bias annealing. The study found that when the radiation generated by the oxide layer capture charge more than the interface state charge, the isothermal annealing will cause the interface state charge increases. Interfacial charge is caused by the charge trapping of the oxide layer into interfacial charge. The rate-limiting phase of threshold voltage annealing is this transitional phase. When the interfacial charges are obviously induced by the irradiation, the interfacial charges caused by the irradiation can be eliminated immediately after annealing at high temperature, but the phenomenon that the charge traps from the oxide layer to the interfacial states is also found. Therefore, the characteristics of the interface state annealing at high temperatures become complicated. The instability of the threshold voltage after irradiation is due to the increase or decrease of the interface states.