论文部分内容阅读
V 形槽金属氧化物半导体(VMOS)器件为混频器的设计提供了一条新的途径。这种器件改善了高质量通信设备端口间的隔离度并提高了抗带内外强信号干扰的能力。
V-groove metal oxide semiconductor (VMOS) devices provide a new avenue for mixer design. This device improves the isolation between high-quality communication device ports and improves the ability of strong signal interference inside and outside the band.