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采用一种量子力学模型,研究了类MOSFET型碳纳米管场效应管(CNTFET)的电流特性。该模型基于二维非平衡格林函数(NEGF)方程和泊松(Poisson)方程自洽全量子数值解。结合器件的工作原理,研究了器件结构尺寸效应,比较分析单栅、异质栅CNTFET的电学特性。研究结果表明,与单栅结构相比,异质栅器件结构具有更低的泄漏电流、更高的电流开关比,并且,在15nm技术节点以上,异质栅CNTFET器件能够较好地满足ITRS10的相关性能指标要求。
A quantum mechanics model was used to study the current characteristics of a MOSFET-like carbon nanotube field effect transistor (CNTFET). The model is based on the self-consistent full quantum solution of two-dimensional non-equilibrium Green’s function (NEGF) equation and Poisson’s equation. Combined with the working principle of the device, the size effect of the device structure is studied, and the electrical characteristics of the single-gate and hetero-gate CNTFETs are comparatively analyzed. The results show that, compared with single-gate structure, the structure of hetero-gate device has lower leakage current and higher current switching ratio. Moreover, the hetero-gate CNTFET device can better meet ITRS ’at 15nm node. 10 related performance requirements.