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为了减少激光二极管泵浦激光晶体过程中产生的热量,并提高与泵浦材料的光学耦合效率,理论设计并实验制备了低发散角的885 nm高功率激光二极管列阵。通过在限制层中引入渐变光扩展结构,结合对整体外延材料结构的优化设计,有效减小了激光器件的远场垂直发散角。采用AlGaInAs/AlGaAs量子阱适当增加材料的压应变,提高外延材料光增益系数,并对量子阱的组分和厚度进行了优化。采用低压金属有机化学汽相沉积(LP-MOCVD)技术制备了外延材料,并制作成1 cm单条激光列阵。测试结果表明:器件远场垂直发散角减小到17.6°,输出光功率为20.1W,斜率效率为1.05W/A,相应中心波长为888.2 nm。
In order to reduce the heat generated in the laser diode laser diode laser process and improve the optical coupling efficiency with the pump material, a 885 nm high power laser diode array with low divergence angle was theoretically designed and experimentally fabricated. By introducing a gradual light expansion structure in the confinement layer and combining with the optimized design of the overall epitaxial material structure, the far-field vertical divergence angle of the laser device is effectively reduced. The AlGaInAs / AlGaAs quantum well is used to appropriately increase the compressive strain of the material to increase the optical gain coefficient of the epitaxial material, and the composition and thickness of the quantum well are optimized. Epitaxial materials were prepared by low pressure metal-organic chemical vapor deposition (LP-MOCVD) and fabricated into single-laser arrays of 1 cm. The test results show that the vertical divergence angle of the far field is reduced to 17.6 °, the output optical power is 20.1W, the slope efficiency is 1.05W / A and the corresponding center wavelength is 888.2 nm.