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提出了一个基于BSIM3的LDMOS大信号模型。LDMOS晶体管分为本征MOS晶体管和漂移区电阻两部分,本征MOS晶体管采用BSIM3模型,漂移区电阻采用一个随栅漏电压变化的电阻模型。根据ISE仿真结果,可以得到漂移区电阻模型。模型考虑自加热效应后,经过参数提取,模拟数据可以很好地与实际器件的测试数据相吻合,说明模型可用于LDMOS功率器件的电路仿真。
A large signal model of LDMOS based on BSIM3 is proposed. LDMOS transistor is divided into intrinsic MOS transistor and drift region resistance of two parts, the intrinsic MOS transistor BSIM3 model used, the drift region resistance with a gate-drain voltage variation of the resistance model. According to the ISE simulation results, the drift region resistance model can be obtained. After taking into account the effect of self-heating, the model is extracted through the parameters. The simulated data can be in good agreement with the test data of the actual device, indicating that the model can be used for the circuit simulation of LDMOS power devices.