用射频磁控溅射制备了一系列Ｇｅ／Ｓｉ多层膜，采用Ｘ射线小角衍射测量了不同溅射压强下制备的样品，计算出了多层膜的周期．通过计算机模拟实验曲线确定出了Ｇｅ和Ｓｉ的分层厚度，计算出了不同压强下的溅射速率．实验和计算机模拟都表明了在衬底温度为５９０℃、溅射功率为１５０Ｗ的溅射条件下１．５～２．５Ｐａ氩气压强时制备出的样品周期性、均匀性和平整性都比其它压强下制备的样品好． A series of Ge / Si multilayers were prepared by RF magnetron sputtering. Samples prepared under different sputtering pressures were measured by X-ray small angle diffraction and the period of multilayer films was calculated. The delamination thickness of Ge and Si was determined by computer simulation experiment curve, and the sputtering rate under different pressure was calculated. Experiments and computer simulations have shown that the samples prepared at 1.5 ~ 2.5Pa argon pressure at sputtering temperature of 590 ℃ and sputtering power of 150W have the same properties of periodicity, uniformity and flatness Samples prepared at other pressures are good.