基于0.18μm SiGe BiCMOS工艺,设计了一种应用于下一代移动通信3GPP LTE TDD2.6 GHz频段(Band38)的射频功率放大器(PA)芯片。射频功率放大器采用共发射极3级级联的全差分结构,提高了输出电压摆幅,减小了功率晶体管的集电极电流,且降低了寄生的键合线电感。在预放大级和中间放大级、功率级中分别设计了电阻偏置和有源偏置两种偏置电路以提高线性度性能,并通过MOS开关管实现功率控制功能。测试结果表明:在2.57～2.62 GHz工作频段内,正向增益S21大于30.5 dB,输入回波损耗S11和输出回波损耗S22分别均小于-13 dB,功率增益大于31 dB,输出1 dB压缩点功率达28.6 dBm,功率附加效率为18%。 Based on the 0.18μm SiGe BiCMOS process, a radio frequency power amplifier (PA) chip for 3GPP LTE TDD2.6 GHz band (Band38) for next generation mobile communication is designed. The RF power amplifier uses a triple differential cascode structure with a common emitter, which increases the output voltage swing, reduces the collector current of the power transistor and reduces the parasitic bond wire inductance. In the pre-amplifier stage and intermediate amplifier stage, the power stage has been designed resistance bias and active bias two bias circuits to improve the linearity performance, and through the MOS switch to achieve power control. The test results show that the positive gain S21 is greater than 30.5 dB and the input return loss S11 and output return loss S22 are respectively less than -13 dB and the power gain is greater than 31 dB in the operating frequency range of 2.57-2.62 GHz. The output 1 dB compression point Power up to 28.6 dBm, power added efficiency of 18%.