对氮化 H2 - O2 合成薄栅氧抗辐照性能进行了研究 ,将 H2 - O2 合成和氮氧化栅两种技术结合起来 ,充分利用两者的优点制成三层结构的 Sandwich栅 ,对比常规氧化、H2 - O2 合成氧化和氮化 H2 - O2 合成氧化三种方式及不同退火条件 ,得出氮化 H2 - O2 合成氧化方法抗辐照性能最佳 ,采用硅化物工艺加快速热退火是未来抗辐照工艺发展的趋势 ;并对氮化 H2 - O2 合成栅的抗辐照机理进行了研究 The anti - radiation performance of H2S - O2 thin gate oxide was studied. Combining the H2 - O2 synthesis and the oxynitride gate technology, Sandwich grid with three - layer structure was made by making full use of the advantages of the two. Oxidation, H2 - O2 and H2O2 - O2 synthesis and different annealing conditions, it is concluded that H2O2 - O2 synthesis oxidation method has the best anti - radiation performance and the silicide process to speed up thermal annealing is the future Anti-radiation process development trend; and anti-radiation mechanism of the H2-O2 synthesis grid nitriding