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利用溶胶-凝胶工艺在ITO/玻璃衬底上制备了Bi_(1-x)Gd_xFeO_3(x=0.00、0.05、0.10和0.15)薄膜。研究了Gd掺杂对薄膜的结构、形貌、漏电流性能和介电性能的影响。结果显示,未掺Gd和Gd掺杂为5%的样品为菱方结构,当Gd掺杂量达到10%和15%时,样品变为四方结构。掺10%Gd的薄膜样品表面光滑、平整,晶粒大小均匀。Gd的掺入大大降低了BiFeO_3(BFO)薄膜的漏电流,其中掺Gd量为10%和15%的薄膜的漏电流几乎为零。在整个测试频率范围内,掺10%Gd的样品的介电常数较大且能保持恒定,同时其介电损耗最小。
Bi_ (1-x) Gd_xFeO_3 (x = 0.00, 0.05, 0.10 and 0.15) thin films were prepared on ITO / glass substrates by sol-gel process. The effects of Gd doping on the structure, morphology, leakage current and dielectric properties of the films were investigated. The results show that the samples with 5% undoped Gd and Gd are rhombic structures. When the Gd doping amount reaches 10% and 15%, the samples become tetragonal structures. Films doped with 10% Gd showed smooth, smooth and uniform grain size. Gd incorporation greatly reduces the leakage current of the BiFeO_3 (BFO) film, in which the leakage current of the films doped with Gd of 10% and 15% is almost zero. The sample doped with 10% Gd has a large and constant dielectric constant over the entire test frequency range with minimal dielectric loss.