本文简要总结国家表面物理实验室五年以来,尤其是近年来用O_2源与Cs源二次离子质谱的半导体分析工作,介绍了Si和GaAs材料中O杂质与掺杂元素离子注入浓度分布、热处理后掺杂元素重新分布、辐照感生扩散增强效应、半导体超晶格和量子阱器件及δ掺杂的SIMS分析等四个典型的应用实例,说明了SIMS的重要性,同时提出了在应用SIMS数据时必须注意的几个问题. This paper briefly summarizes the semiconductor analysis work of the National Surface Physics Laboratory in recent five years, especially the O 2 source and Cs source secondary ion mass spectrometry in recent years, introduces the ion concentration distribution of O impurity and doped element in Si and GaAs materials, The rearrangement of post-doping elements, the enhanced effect of radiation induced diffusion, the application of semiconductor superlattice and quantum well devices and the δ-doping SIMS analysis, illustrate the importance of SIMS, SIMS data must pay attention to several issues.