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用扫描遂穿显微镜(STM)研究了用于 MBE 生长的 CdTe 基底表面,发现其表面不平整度取决于不同的表面制备步骤。机械抛光试样的表面粗糙度大约为100nm,这是由抛光粉决定的。用化学-机械抛光法制备的样品表面粗糙度下降至60nm。经腐蚀抛光后的
The surface of the CdTe substrate used for MBE growth was investigated using a scanning tunneling microscope (STM) and the surface roughness was found to depend on different surface preparation steps. The surface roughness of the mechanically polished sample is about 100 nm, which is determined by the polishing powder. The surface roughness of samples prepared by chemical-mechanical polishing decreased to 60nm. After the erosion of polished