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采用非均匀阱宽多量子阱材料拓宽超辐射器件的输出光谱 ,并利用前期关于倾斜脊形集成超辐射光源的研究成果 ,制得了新型的 1 5 5 μm高功率宽光谱InGaAsP InP集成超辐射光源。发现该器件较均匀阱宽多量子阱器件的输出光谱有很大变化 ,光谱半宽由原来的 2 0～ 30nm ,增加到 4 5～ 6 0nm左右。该器件同样具有较好的抑制激射能力 ,在可测试范围内 ,在没有蒸镀腔面抗反射膜的情况下未见激射模式的出现。在准连续工作条件下 ,器件最大峰值功率已达到 15 0mW以上。
A novel wide-spectrum InGaAsP InP integrated 1.55 μm high-power superluminescent source was fabricated by using the non-uniform well wide MQW material to broaden the output spectrum of the super-radiation device and utilizing the previous research results on the tilted ridge-type integrated superluminescent light source . It is found that the output spectrum of the MQW device is much wider than that of the MQW device. The spectral half-width increases from 20 ~ 30 nm to 45 ~ 60 nm. The device also has a better suppression of lasing ability, in the test range, no vapor deposition cavity surface anti-reflective film case no lasing mode appears. In quasi-continuous working conditions, the maximum peak power of the device has reached more than 15 0mW.