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用扫描内光电发射法结合液晶显示法与自愈击穿法研究了SiO_2薄膜低击穿的起因,得到液晶显示的SiO_2膜中的缺陷是膜层低击穿的原因,而膜中可动正离子在缺陷处的堆积则引起击穿电压进一步降低的结论.
The reason of the low breakdown of SiO_2 thin film was studied by scanning photoemission method combined with liquid crystal display method and self-healing breakdown method. The defects in the liquid crystal display SiO_2 film were the cause of the low breakdown of the film, The accumulation of ions at defects causes the breakdown voltage to decrease further.