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A heterostructure composed of a Bi2Fe4O9 film and an n-type Si substrate is fabricated.The characteristics of leakage current density versus electric field are investigated and the leakage current density is about 6×10(-6) A/cm2 at an electric field of 200kV/cm at 300K.A strong photovoltaic effect is observed when the heterostructure is exposed to a laser pulse with a wavelength of 532nm and a power of 6mW/mm2.It is found that the peak photovoltages initially increase with decreasing temperature, followed by a decrease at T＜210 K.These results reveal that the heterostructure is a promising candidate for photovoltaic devices that are compatible with Si integrated circuits.