【摘 要】
:
以非晶Ni-Al薄膜作为Cu互连的阻挡层材料,采用射频磁控溅射法构架了Cu/Ni-Al/Si的异质结。利用原子力显微镜、X射线衍射仪和四探针测试仪研究了不同温度下高真空退火样品的表
【机 构】
:
河北大学物理科学与技术学院,燕山大学亚稳材料制备技术与科学国家重点实验室,河北大学电子信息工程学院,
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以非晶Ni-Al薄膜作为Cu互连的阻挡层材料,采用射频磁控溅射法构架了Cu/Ni-Al/Si的异质结。利用原子力显微镜、X射线衍射仪和四探针测试仪研究了不同温度下高真空退火样品的表面形貌、微观结构与输运性质。实验发现非晶Ni-Al薄膜在高达750℃的退火温度仍能保持非晶结构,各膜层之间没有明显的反应和互扩散存在,表明了非晶Ni-Al薄膜具有良好的阻挡效果,可以用作Cu互连的阻挡层材料。
An amorphous Ni-Al thin film was used as a barrier material for Cu interconnection. The heterojunction of Cu / Ni-Al / Si was fabricated by RF magnetron sputtering. The surface morphology, microstructure and transport properties of high vacuum annealed samples at different temperatures were investigated by atomic force microscopy, X-ray diffraction and four-probe test. It has been found that the amorphous Ni-Al films can maintain the amorphous structure at the annealing temperature of up to 750 ℃. There is no obvious reaction and interdiffusion between the films, which shows that the amorphous Ni-Al films have good barrier effect, It can be used as a barrier material for Cu interconnects.
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