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SiC材料的禁带宽度为3eV,相当于Si的2.7倍。SiC的宽禁带、高击穿电场、高热导和高载流子饱和速度等优良的材料特性为其微波功率性能的发挥提供了一个诱人的前景。国外在这方面投入了较大的人力和物力,开展多方面的研究工作。
The forbidden band width of SiC material is 3eV, equivalent to 2.7 times of Si. The excellent material properties of SiC such as wide band gap, high breakdown electric field, high thermal conductance and high carrier saturation speed provide an attractive prospect for the microwave power performance. In this regard, foreign countries have devoted a great deal of manpower and material resources to carrying out various research work.