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The interface structure between the Si and NiSi2 epitaxially grown on the ((-1)12) Si substrate was studied using high resolution transmission electron microscopy and computer image simulation. The results showed that the interface between Si and NiSi2 epitaxially grown on the ((-1)12) Si substrate has six different types: type A NiSi2 ((-1)11 )/( (-1)11 ) Si, type A NiSi2 (001)/(001) Si, type B NiSi2 (1(-1)(-1))/(1(-1)1) Si, type B NiSi2 ((-1)12)/(1(-1)2) Si, type B NiSi2 (2(-2)1)/(001) Si, and type B NiSi2 (1(-1)(4))/( 1(-1)0 ) Si. And there are one or more different atomic structures for one type of interface.